Title:
An assessment of silicon-germanium BiCMOS technologies for extreme environment applications
An assessment of silicon-germanium BiCMOS technologies for extreme environment applications
Authors
Lourenco, Nelson Estacio
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Cressler, John D.
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Abstract
This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.
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Date Issued
2012-11-13
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