CMOS RF power amplifiers for mobile wireless communications

Thumbnail Image
An, Kyu Hwan
Laskar, Joy
Associated Organizations
Supplementary to
The explosive growth of the wireless market has increased the demand for low-cost, highly-integrated CMOS wireless transceivers. However, the implementation of CMOS RF power amplifiers remains a formidable challenge. The objective of this research is to demonstrate the feasibility of CMOS RF power amplifiers by compensating for the RF performance disadvantages of CMOS technology. This dissertation proposes a parallel-combining transformer (PCT) as an impedance-matching and output-combining network. The results of a comprehensive analysis show that the PCT is a suitable solution for watt-level output power generation in cellular applications. To achieve high output power and high efficiency, the work presented here entailed the design of a class-E switching power amplifier in a 0.18-μm CMOS technology for GSM applications and, with the suggested power amplifier design technique, successfully demonstrated a fully-integrated RF front-end consisting of a power amplifier and an antenna switch. This dissertation also proposed an efficiency enhancement technique at power back-off. In an effort to save current in the power back-off while satisfying the EVM requirements, a class-AB linear power amplifier was implemented in a 0.18-μm CMOS technology for WLAN and WiMAX applications using a PCT as well as an operation class shift between class-A and class-B. Thus, the research in this dissertation provides low-cost CMOS RF power amplifier solutions for commercial products used in mobile wireless communications.
Date Issued
Resource Type
Resource Subtype
Rights Statement
Rights URI