Title:
Quantum model of the modulation doped field effect transistor

dc.contributor.advisor Uyemura, John P.
dc.contributor.author Wiederspahn, H. Lee en_US
dc.contributor.department Electrical Engineering en_US
dc.date.accessioned 2007-02-09T20:56:35Z
dc.date.available 2007-02-09T20:56:35Z
dc.date.issued 1992-05 en_US
dc.description.degree Ph.D. en_US
dc.format.extent 240 bytes
dc.format.mimetype text/html
dc.identifier.bibid 353650 en_US
dc.identifier.uri http://hdl.handle.net/1853/13355
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.rights Access restricted to authorized Georgia Tech users only. en_US
dc.subject.lcsh Field-effect transistors en_US
dc.subject.lcsh Modulation-doped field-effect transistors en_US
dc.subject.lcsh Wave mechanics en_US
dc.title Quantum model of the modulation doped field effect transistor en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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