Title:
Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
dc.contributor.author | Beechem, Thomas | |
dc.contributor.author | Graham, Samuel | |
dc.contributor.author | Kearney, Sean P. | |
dc.contributor.author | Phinney, Leslie M. | |
dc.contributor.author | Serrano, Justin R. | |
dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | |
dc.contributor.corporatename | Georgia Institute of Technology. School of Mechanical Engineering | |
dc.date.accessioned | 2012-12-04T23:50:14Z | |
dc.date.available | 2012-12-04T23:50:14Z | |
dc.date.issued | 2007-06 | |
dc.description | © 2007 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2738946 | en_US |
dc.description | DOI: 10.1063/1.2738946 | |
dc.description.abstract | Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of ±40 MPa for an average applied stress of −325 MPa and temperature of 520 °C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement. | en_US |
dc.identifier.citation | Beechem, Thomas; Graham, Samuel; Kearney, Sean P.; Phinney, Leslie M. and Serrano, Justin R., "Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy," Review of Scientific Instruments, 78, 6, (June 2007). | en_US |
dc.identifier.doi | 10.1063/1.2738946 | |
dc.identifier.issn | 0034-6748 (print) | |
dc.identifier.issn | 1089-7623 (online) | |
dc.identifier.uri | http://hdl.handle.net/1853/45498 | |
dc.language.iso | en_US | en_US |
dc.publisher | Georgia Institute of Technology | en_US |
dc.publisher.original | American Institute of Physics | |
dc.subject | Micromechanical devices | en_US |
dc.subject | Raman spectra | en_US |
dc.subject | Finite element analysis | en_US |
dc.title | Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy | en_US |
dc.type | Text | |
dc.type.genre | Article | |
dspace.entity.type | Publication | |
local.contributor.author | Graham, Samuel | |
local.contributor.corporatename | Center for Organic Photonics and Electronics | |
relation.isAuthorOfPublication | cf62405d-2133-40a8-b046-bce4a3443381 | |
relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |