Title:
Low-power, high-efficiency, and high-linearity CMOS millimeter-wave circuits and transceivers for wireless communications

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dc.contributor.advisor Papapolymerou, John
dc.contributor.advisor Dawn, Debasis
dc.contributor.author Juntunen, Eric A. en_US
dc.contributor.committeeMember Christos Alexopoulos
dc.contributor.committeeMember Emmanouil M. Tentzeris
dc.contributor.committeeMember Chang, Gee-Kung
dc.contributor.committeeMember Cressler, John D.
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2012-09-20T18:12:13Z
dc.date.available 2012-09-20T18:12:13Z
dc.date.issued 2012-04-26 en_US
dc.description.abstract This dissertation presents the design and implementation of circuits and transceivers in CMOS technology to enable many new millimeter-wave applications. A simple approach is presented for accurately modeling the millimeter-wave characteristics of transistors that are not fully captured by contemporary parasitic extraction techniques. Next, the integration of a low-power 60-GHz CMOS on-off keying (OOK) receiver in 90-nm CMOS for use in multi-gigabit per second wireless communications is demonstrated. The use of non-coherent OOK demodulation by a novel demodulator enabled a data throughput of 3.5 Gbps and resulted in the lowest power budget (31pJ/bit) for integrated 60-GHz CMOS OOK receivers at the time of publication. Also presented is the design of a high-power, high-efficiency 45-GHz VCO in 45-nm SOI CMOS. The design is a class-E power amplifier placed in a positive feedback configuration. This circuit achieves the highest reported output power (8.2 dBm) and efficiency (15.64%) to date for monolithic silicon-based millimeter-wave VCOs. Results are provided for the standalone VCO as well as after packaging in a liquid crystal polymer (LCP) substrate. In addition, a high-power high-efficiency (5.2 dBm/6.1%) injection locked oscillator is presented. Finally, the design of a 2-channel 45-GHz vector modulator in 45-nm SOI CMOS for LINC transmitters is presented. A zero-power passive IQ generation network and a low-power Gilbert cell modulator are used to enable continuous 360° vector generation. The IC is packaged with a Wilkinson power combiner on LCP and driven by external DACs to demonstrate the first ever 16-QAM generated by outphasing modulation in CMOS in the Q-band. en_US
dc.description.degree PhD en_US
dc.identifier.uri http://hdl.handle.net/1853/44703
dc.publisher Georgia Institute of Technology en_US
dc.subject CMOS en_US
dc.subject Millimeter-wave en_US
dc.subject Transceiver en_US
dc.subject 60-GHz en_US
dc.subject Power amplifier en_US
dc.subject PA en_US
dc.subject VCO en_US
dc.subject Class-E en_US
dc.subject OOK en_US
dc.subject.lcsh Wireless communication systems
dc.subject.lcsh Metal oxide semiconductors, Complementary
dc.subject.lcsh Millimeter wave communication systems
dc.subject.lcsh Millimeter wave devices
dc.title Low-power, high-efficiency, and high-linearity CMOS millimeter-wave circuits and transceivers for wireless communications en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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