Title:
Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures
Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures
dc.contributor.advisor | Brennan, Kevin F. | |
dc.contributor.author | Og̃uzman, İsmail Hakki | en_US |
dc.contributor.department | Electrical and Computer Engineering | en_US |
dc.contributor.department | Electrical Engineering | en_US |
dc.date.accessioned | 2007-09-26T14:43:40Z | |
dc.date.available | 2007-09-26T14:43:40Z | |
dc.date.issued | 1996-08 | en_US |
dc.description.degree | Ph.D. | en_US |
dc.identifier.bibid | 438491 | en_US |
dc.identifier.uri | http://hdl.handle.net/1853/16712 | |
dc.publisher | Georgia Institute of Technology | en_US |
dc.rights | Access restricted to authorized Georgia Tech users only. | en_US |
dc.subject.lcsh | Semiconductors Optical properties | en_US |
dc.subject.lcsh | Photoelectric devices | en_US |
dc.title | Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures | en_US |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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