Title:
Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices
Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices
dc.contributor.advisor | Brennan, Kevin F. | |
dc.contributor.author | Yu, Tsung-Hsing | en_US |
dc.contributor.department | Electrical and Computer Engineering | en_US |
dc.date.accessioned | 2006-12-21T15:10:04Z | |
dc.date.available | 2006-12-21T15:10:04Z | |
dc.date.issued | 2002-12 | en_US |
dc.description.degree | Ph.D. | en_US |
dc.format.extent | 239 bytes | |
dc.format.mimetype | text/html | |
dc.identifier.bibid | 662035 | en_US |
dc.identifier.uri | http://hdl.handle.net/1853/13035 | |
dc.language.iso | en_US | |
dc.publisher | Georgia Institute of Technology | en_US |
dc.rights | Access restricted to authorized Georgia Tech users only. | en_US |
dc.subject.lcsh | Electron transport | en_US |
dc.subject.lcsh | Modulation-doped field-effect transistors | en_US |
dc.title | Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices | en_US |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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