Title:
Epitaxial overgrowth studies

dc.contributor.author Pollard, Charles Oscar en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs en_US
dc.contributor.corporatename Georgia Institute of Technology. Engineering Experiment Station en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs
dc.date.accessioned 2013-10-24T14:38:39Z
dc.date.available 2013-10-24T14:38:39Z
dc.date.issued 1969 en_US
dc.description Issued as Progress report [1-3], and Final report, Project no. B-350 en_US
dc.identifier.other 253313 en_US
dc.identifier.uri http://hdl.handle.net/1853/49260
dc.publisher Georgia Institute of Technology en_US
dc.relation.ispartofseries Engineering Experiment Station ; Project no. B-350 en_US
dc.subject.lcsh Crystal growth en_US
dc.subject.lcsh Epitaxy en_US
dc.title Epitaxial overgrowth studies en_US
dc.type Text
dc.type.genre Technical Report
dspace.entity.type Publication
local.contributor.corporatename Georgia Tech Research Institute (GTRI)
relation.isOrgUnitOfPublication 3928f3f0-0759-4b3a-aa0a-10075096fef4
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