Title:
Modeling of the excited modes in inverted embedded microstrip lines using the finite-difference time-domain (FDTD) technique

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dc.contributor.advisor Tentzeris, Emmanouil M.
dc.contributor.author Haque, Amil en_US
dc.contributor.committeeMember Andrew Peterson
dc.contributor.committeeMember Laskar, Joy
dc.contributor.committeeMember Papapolymerou, Ioannis
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2009-01-22T15:47:47Z
dc.date.available 2009-01-22T15:47:47Z
dc.date.issued 2008-11-20 en_US
dc.description.abstract This thesis investigates the presence of multiple (quasi-TEM) modes in inverted embedded microstrip lines. It has already been shown that parasitic modes do exist in inverted embedded microstrips due to field leakage inside the dielectric substrate, especially for high dielectric constants (like Silicon). This thesis expands upon that work and characterizes those modes for a variety of geometrical dimensions. Chapter 1 focuses on the theory behind the different transmission line modes, which may be present in inverted embedded microstrips. Based on the structure of the inverted embedded microstrip, the conventional microstrip mode, the quasi-conventional microstrip mode, and the stripline mode are expected. Chapter 2 discusses in detail the techniques used to decompose the total probed field into the various modes present in the inverted embedded microstrip lines. Firstly, a short explanation of the finite-difference time-domain method, that is used for the simulation and modeling of inverted microstrips up to 50 GHz is provided. Next, a flowchart of the process involved in decomposing the modes is laid out. Lastly, the challenges of this approach are also highlighted to give an appreciation of the difficulty in obtaining accurate results. Chapter 3 shows the results (dispersion diagrams, values/percentage of the individual mode energies ) obtained after running time-domain simulations for a variety of geometrical dimensions. Chapter 4 concludes the thesis by explaining the results in terms of the transmission line theory presented in Chapter 1. Next, possible future work is mentioned. en_US
dc.description.degree M.S. en_US
dc.identifier.uri http://hdl.handle.net/1853/26582
dc.publisher Georgia Institute of Technology en_US
dc.subject Inverted embedded microstrip en_US
dc.subject Mode decomposition en_US
dc.subject FDTD en_US
dc.subject.lcsh Strip transmission lines
dc.subject.lcsh Finite differences
dc.subject.lcsh Silicon--Electric properties
dc.subject.lcsh Numerical analysis
dc.title Modeling of the excited modes in inverted embedded microstrip lines using the finite-difference time-domain (FDTD) technique en_US
dc.type Text
dc.type.genre Thesis
dspace.entity.type Publication
local.contributor.advisor Tentzeris, Emmanouil M.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 763bf38d-e5cc-4ebb-b84a-74133d98e550
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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