Title:
Through-package-via (TPV) Structures On Inorganic Interposer And Methods For Fabricating Same

dc.contributor.patentcreator Sundaram, Venkatesh
dc.contributor.patentcreator Liu, Fuhan
dc.contributor.patentcreator Tummala, Rao
dc.contributor.patentcreator Sukumaran, Vijay
dc.contributor.patentcreator Sridharan, Vivek
dc.contributor.patentcreator Chen, Qiao
dc.date.accessioned 2017-05-12T14:26:47Z
dc.date.available 2017-05-12T14:26:47Z
dc.date.filed 3/3/2011
dc.date.issued 3/1/2016
dc.description.abstract Aspects of the present disclosure generally relate to a microelectronic package including a plurality of through vias having walls in a glass interposer having a top portion and a bottom portion. The microelectric package may also include a stress relief barrier on at least a portion of the top and bottom portions of the glass interposer. The microelectric package may further include a metallization seed layer on at least a portion of the stress relief layer and a conductor on at least a portion of the metallization seed layer. The conductor extends through at least a portion of the plurality of the through vias, forming a plurality of metalized through package vias. At least a portion of the through vias are filled with the stress relief layer or the metallization seed layer.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L21/486
dc.identifier.cpc H01L23/15
dc.identifier.cpc H01L23/49827
dc.identifier.patentapplicationnumber 13/582453
dc.identifier.patentnumber 9275934
dc.identifier.uri http://hdl.handle.net/1853/57055
dc.identifier.uspc 1-Jan
dc.title Through-package-via (TPV) Structures On Inorganic Interposer And Methods For Fabricating Same
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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