Title:
Dopants For Semiconducting Materials
Dopants For Semiconducting Materials
dc.contributor.patentcreator | Rees Jr., William S. | |
dc.contributor.patentcreator | Luten III, Henry A. | |
dc.date.accessioned | 2017-05-12T14:27:35Z | |
dc.date.available | 2017-05-12T14:27:35Z | |
dc.date.filed | 7/10/1997 | |
dc.date.issued | 12/5/2000 | |
dc.description.abstract | A magnesium amide for use as a magnesium donor not having any Mg--C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition. | |
dc.description.assignee | Georgia Tech Research Corporation | |
dc.identifier.cpc | C07F7/10 | |
dc.identifier.patentapplicationnumber | 08/889972 | |
dc.identifier.patentnumber | 6156917 | |
dc.identifier.uri | http://hdl.handle.net/1853/57364 | |
dc.identifier.uspc | 556/410 | |
dc.title | Dopants For Semiconducting Materials | |
dc.type | Text | |
dc.type.genre | Patent | |
dspace.entity.type | Publication | |
local.contributor.corporatename | Georgia Institute of Technology | |
local.relation.ispartofseries | Georgia Tech Patents | |
relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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