Title:
The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots

dc.contributor.author Meemongkolkiat, Vichai
dc.contributor.author Nakayashiki, Kenta
dc.contributor.author Rohatgi, Ajeet
dc.contributor.author Crabtree, Geoffrey
dc.contributor.author Nickerson, Jeff
dc.contributor.author Jester, Theresa L.
dc.contributor.corporatename Georgia Institute of Technology. School of Electrical and Computer Engineering
dc.contributor.corporatename Shell Solar Industries
dc.contributor.corporatename Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education
dc.date.accessioned 2008-12-10T20:47:02Z
dc.date.available 2008-12-10T20:47:02Z
dc.date.issued 2005-01
dc.description Presented at the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida; January 3-7, 2005. ©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en
dc.description.abstract A systematic study of the variation in resistivity and lifetime on cell performance, before and after light-induced degradation (LID), was performed along the B- and Ga-doped Czochralski (Cz) ingots. Screen-printed solar cells with Al-back surface field were fabricated and analyzed from different locations on the ingots. Despite the large variation in resistivity (0.57 Ω-cm to 2.5 Ω-cm) and lifetime (100-1000 μs) in the Ga-doped Cz ingot, the efficiency variation was found to be ≤ 0.5%. No LID was observed in the cells fabricated from the Ga-doped ingot. In contrast with the Ga-doped ingot, the B-doped ingot showed a very tight resistivity range (0.87 Ω-cm to 1.22 Ω-cm), resulting in very tight lifetime and efficiency distributions. However, the LID effect reduced the efficiency of these B-doped cells by about 1.1% absolute. Additionally, the use of thinner substrate and higher resistivity B-doped Cz is shown to effectively reduce the LID effect. en
dc.identifier.uri http://hdl.handle.net/1853/25944
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.subject Solar cells en
dc.subject Screen-printed solar cells en
dc.subject Light induced degradation en
dc.title The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots en
dc.type Text
dc.type.genre Proceedings
dspace.entity.type Publication
local.contributor.author Rohatgi, Ajeet
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
local.contributor.corporatename University Center of Excellence for Photovoltaics
relation.isAuthorOfPublication b7cc3b55-ebc6-42fd-b859-107fb271b10d
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
relation.isOrgUnitOfPublication 93ace8d3-7479-459e-b63d-27aff6118464
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