Title:
The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots
The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots
dc.contributor.author | Meemongkolkiat, Vichai | |
dc.contributor.author | Nakayashiki, Kenta | |
dc.contributor.author | Rohatgi, Ajeet | |
dc.contributor.author | Crabtree, Geoffrey | |
dc.contributor.author | Nickerson, Jeff | |
dc.contributor.author | Jester, Theresa L. | |
dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | |
dc.contributor.corporatename | Shell Solar Industries | |
dc.contributor.corporatename | Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education | |
dc.date.accessioned | 2008-12-10T20:47:02Z | |
dc.date.available | 2008-12-10T20:47:02Z | |
dc.date.issued | 2005-01 | |
dc.description | Presented at the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida; January 3-7, 2005. ©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | en |
dc.description.abstract | A systematic study of the variation in resistivity and lifetime on cell performance, before and after light-induced degradation (LID), was performed along the B- and Ga-doped Czochralski (Cz) ingots. Screen-printed solar cells with Al-back surface field were fabricated and analyzed from different locations on the ingots. Despite the large variation in resistivity (0.57 Ω-cm to 2.5 Ω-cm) and lifetime (100-1000 μs) in the Ga-doped Cz ingot, the efficiency variation was found to be ≤ 0.5%. No LID was observed in the cells fabricated from the Ga-doped ingot. In contrast with the Ga-doped ingot, the B-doped ingot showed a very tight resistivity range (0.87 Ω-cm to 1.22 Ω-cm), resulting in very tight lifetime and efficiency distributions. However, the LID effect reduced the efficiency of these B-doped cells by about 1.1% absolute. Additionally, the use of thinner substrate and higher resistivity B-doped Cz is shown to effectively reduce the LID effect. | en |
dc.identifier.uri | http://hdl.handle.net/1853/25944 | |
dc.language.iso | en_US | en |
dc.publisher | Georgia Institute of Technology | en |
dc.subject | Solar cells | en |
dc.subject | Screen-printed solar cells | en |
dc.subject | Light induced degradation | en |
dc.title | The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots | en |
dc.type | Text | |
dc.type.genre | Proceedings | |
dspace.entity.type | Publication | |
local.contributor.author | Rohatgi, Ajeet | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
local.contributor.corporatename | University Center of Excellence for Photovoltaics | |
relation.isAuthorOfPublication | b7cc3b55-ebc6-42fd-b859-107fb271b10d | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
relation.isOrgUnitOfPublication | 93ace8d3-7479-459e-b63d-27aff6118464 |
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