Title:
The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots
The Effect of the Variation in Resistivity and Lifetime on the Solar Cells Performance along the Commercially Grown Ga- and B-Doped Czochralski Ingots
Author(s)
Meemongkolkiat, Vichai
Nakayashiki, Kenta
Rohatgi, Ajeet
Crabtree, Geoffrey
Nickerson, Jeff
Jester, Theresa L.
Nakayashiki, Kenta
Rohatgi, Ajeet
Crabtree, Geoffrey
Nickerson, Jeff
Jester, Theresa L.
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Abstract
A systematic study of the variation in resistivity and lifetime on cell performance, before and after light-induced
degradation (LID), was performed along the B- and Ga-doped Czochralski (Cz) ingots. Screen-printed solar cells with Al-back surface field were fabricated and analyzed
from different locations on the ingots. Despite the large variation in resistivity (0.57 Ω-cm to 2.5 Ω-cm) and lifetime
(100-1000 μs) in the Ga-doped Cz ingot, the efficiency variation was found to be ≤ 0.5%. No LID was observed in the cells fabricated from the Ga-doped ingot. In contrast
with the Ga-doped ingot, the B-doped ingot showed a very tight resistivity range (0.87 Ω-cm to 1.22 Ω-cm), resulting in very tight lifetime and efficiency distributions. However, the LID effect reduced the efficiency of these B-doped cells by about 1.1% absolute. Additionally, the use of
thinner substrate and higher resistivity B-doped Cz is shown to effectively reduce the LID effect.
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Date Issued
2005-01
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Proceedings