Title:
Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer deposition
Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer deposition
| dc.contributor.author | Tiwari, Shree Prakash | en_US |
| dc.contributor.author | Zhang, Xiaohong | en_US |
| dc.contributor.author | Potscavage, William J., Jr. | en_US |
| dc.contributor.author | Kippelen, Bernard | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2013-05-06T20:21:13Z | |
| dc.date.available | 2013-05-06T20:21:13Z | |
| dc.date.issued | 2009-12 | |
| dc.description | © 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3269579 | en_US |
| dc.description | DOI: 10.1063/1.3269579 | en_US |
| dc.description.abstract | High performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition. Devices exhibit excellent n-channel performance with electron mobility values up to 0.14 cm²/V s, threshold voltages of ∼ 0.3 V, current on/off ratios >10⁵, and very low values of subthreshold slope ( ∼ 140 mV/decade). | en_US |
| dc.identifier.citation | Tiwari, Shree Prakash and Zhang, Xiao-Hong and Potscavage, Jr., William J. and Kippelen, Bernard, "Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition," Applied Physics Letters, 95, 22, (November 30 2009) | en_US |
| dc.identifier.doi | 10.1063/1.3269579 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1853/46879 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Atomic layer deposition | en_US |
| dc.subject | Contact resistance | en_US |
| dc.subject | Electron mobility | en_US |
| dc.subject | Hafnium compounds | en_US |
| dc.subject | High-k dielectric thin films | en_US |
| dc.subject | Organic field effect transistors | en_US |
| dc.subject | Organic semiconductors | en_US |
| dc.subject | Semiconductor-insulator boundaries | en_US |
| dc.title | Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer deposition | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Kippelen, Bernard | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 89dff3fa-f69f-48dc-a1b2-89e73be81537 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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