Title:
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
| dc.contributor.patentcreator | Martin, Kevin P. | |
| dc.contributor.patentcreator | Gillis, Harry P. | |
| dc.contributor.patentcreator | Choutov, Dmitri A. | |
| dc.date.accessioned | 2017-05-12T14:27:25Z | |
| dc.date.available | 2017-05-12T14:27:25Z | |
| dc.date.filed | 8/28/1996 | |
| dc.date.issued | 3/16/1999 | |
| dc.description.abstract | A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode. | |
| dc.description.assignee | Georgia Tech Research Corporation | |
| dc.identifier.cpc | H01J37/32018 | |
| dc.identifier.cpc | H01J37/32596 | |
| dc.identifier.cpc | H01J37/32027 | |
| dc.identifier.patentapplicationnumber | 08/705902 | |
| dc.identifier.patentnumber | 5882538 | |
| dc.identifier.uri | http://hdl.handle.net/1853/57291 | |
| dc.identifier.uspc | 216/71 | |
| dc.title | Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates | |
| dc.type | Text | |
| dc.type.genre | Patent | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | Georgia Institute of Technology | |
| local.relation.ispartofseries | Georgia Tech Patents | |
| relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
| relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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