Title:
Hydrogenation of Si from SiN(x):H Films: How Much Hydrogen Is Really in the Si?

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Author(s)
Stavola, Michael
Jiang, Fan
Rohatgi, Ajeet
Kim, Dong Seop
Holt, J.
Atwater, H.
Kalejs, Juris P.
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Abstract
A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN(x) surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN(x) film.
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2003-05
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