Title:
Nanopropeller arrays of zinc oxide

dc.contributor.author Gao, Puxian
dc.contributor.author Wang, Z. L. (Zhong Lin)
dc.contributor.corporatename Georgia Institute of Technology. School of Materials Science and Engineering
dc.date.accessioned 2009-02-26T20:59:58Z
dc.date.available 2009-02-26T20:59:58Z
dc.date.issued 2004-04-12
dc.description ©2004 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/84/2883/1 en
dc.description DOI:10.1063/1.1702137
dc.description.abstract Polar surface dominated ZnO nanopropeller arrays were synthesized by a two-step high temperature solid-vapor deposition process. The axis of the nanopropellers is a straight nanowire along the c axis and enclosed by {20} surfaces, which grew first; the sixfold symmetric nanoblades are later formed along the crystallographic equivalent a axes (20) perpendicular to the nanowire; and the array is formed by epitaxial growth of nanoblades on the nanowire. The top surface of the nanoblade is the Zn terminated +c plane, showing surface steps and possible secondary growth of nanowires due to higher self-catalytic activity, while the back surface is the oxygen-terminated –c plane, which is smooth and inert. en
dc.identifier.citation Applied Physics Letters, 84 (2004) 2883-2885 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/1853/27175
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.publisher.original American Institute of Physics
dc.subject Zinc compounds en
dc.subject II-VI semiconductors en
dc.subject Wide band gap semiconductors en
dc.subject Semiconductor growth en
dc.subject Vapour phase epitaxial growth en
dc.subject Nanowires en
dc.title Nanopropeller arrays of zinc oxide en
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.corporatename School of Materials Science and Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 21b5a45b-0b8a-4b69-a36b-6556f8426a35
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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