Title:
Cu2ZnSnS photovoltaics
Cu2ZnSnS photovoltaics
| dc.contributor.advisor | Ready, W. Jud | |
| dc.contributor.advisor | Doolittle, William Alan | |
| dc.contributor.author | Tran, Christopher Kaho | |
| dc.contributor.committeeMember | Rohatgi, Ajeet | |
| dc.contributor.committeeMember | Cressler, John | |
| dc.contributor.committeeMember | Harris, Robert | |
| dc.contributor.department | Electrical and Computer Engineering | |
| dc.date.accessioned | 2019-08-21T13:55:09Z | |
| dc.date.available | 2019-08-21T13:55:09Z | |
| dc.date.created | 2019-08 | |
| dc.date.issued | 2019-07-23 | |
| dc.date.submitted | August 2019 | |
| dc.date.updated | 2019-08-21T13:55:09Z | |
| dc.description.abstract | Photovoltaics (PV) can be a phenomenal source of green energy that have the potential to outperform fossil fuels in cost and efficiency. CZTS is a popular PV material for having a direct bandgap absorber layer, a relatively high absorption coefficient, an optical bandgap of 1.5 eV, high abundancy, and nontoxicity. Additionally, CZTS has the potential to reach 28% efficiency according to the Shockley-Queisser limit. This work focuses on creating recipes to fabricate CZTS PVs and explores the use of plasma-assisted H2S sulfurization of CZT to create CZTS. The CZTS PV cell consists of a soda lime glass as the substrate, Mo back contact, CZTS absorber layer, CdS window layer, ZnO high resistive transparent layer, and the top contact ITO. Energy dispersive spectroscopy was used to determine the compositions of CZT and CZTS. A 4-point probe technique was used to measure the resistivity of the deposited Mo, ITO, and ZnO. A spectrophotometer was used to measure the transmittance spectrums of the deposited ZnO and ITO. A scanning electron microscope was used to examine the physical effects of sulfurized CZT samples. A voltage sweep was performed on the fabricated cells, in a solar simulated environment, to obtain I-V curves. | |
| dc.description.degree | M.S. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/61791 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | |
| dc.subject | CZTS | |
| dc.subject | CZT | |
| dc.subject | Mo | |
| dc.subject | ZnO | |
| dc.subject | ITO | |
| dc.subject | Photovoltaics | |
| dc.subject | Fabrication | |
| dc.subject | Sulfurization | |
| dc.title | Cu2ZnSnS photovoltaics | |
| dc.type | Text | |
| dc.type.genre | Thesis | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Doolittle, William Alan | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | a8907c5a-5af0-429f-895f-30c9de6f8c15 | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
| thesis.degree.level | Masters |