Title:
Method For Cleaning A Solar Cell Surface Opening Made With A Solar Etch Paste

Simple item page
dc.contributor.patentcreator Rohatgi, Ajeet
dc.contributor.patentcreator Meemongkolkiat, Vichai
dc.date.accessioned 2017-05-12T14:28:48Z
dc.date.available 2017-05-12T14:28:48Z
dc.date.filed 5/6/2008
dc.date.issued 6/22/2010
dc.description.abstract A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L31/022425
dc.identifier.cpc H01L31/068
dc.identifier.cpc H01L31/1804
dc.identifier.patentapplicationnumber 12/116132
dc.identifier.patentnumber 7741225
dc.identifier.uri http://hdl.handle.net/1853/57859
dc.identifier.uspc 438/700
dc.title Method For Cleaning A Solar Cell Surface Opening Made With A Solar Etch Paste
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
7741225.pdf
Size:
659.83 KB
Format:
Adobe Portable Document Format
Description:
Download
Collections
Research Publications