Title:
Systematic Analysis of the Small-Signal and Broadband Noise Performance of Highly Scaled Silicon-Based Field-Effect Transistors
Systematic Analysis of the Small-Signal and Broadband Noise Performance of Highly Scaled Silicon-Based Field-Effect Transistors
| dc.contributor.advisor | Laskar, Joy | |
| dc.contributor.author | Venkataraman, Sunitha | en_US |
| dc.contributor.committeeMember | Chang-Ho Lee | |
| dc.contributor.committeeMember | Emmanouil M. Tentzeris | |
| dc.contributor.committeeMember | Cressler, John D. | |
| dc.contributor.committeeMember | Kevin T. Kornegay | |
| dc.contributor.department | Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2007-08-16T17:52:32Z | |
| dc.date.available | 2007-08-16T17:52:32Z | |
| dc.date.issued | 2007-05-17 | en_US |
| dc.description.abstract | The objective of this work is to provide a comprehensive analysis of the small-signal and broadband noise performance of highly scaled silicon-based field-effect transistors (FETs), and develop high-frequency noise models for robust radio frequency (RF) circuit design. An analytical RF noise model is developed and implemented for scaled Si-CMOS devices, using a direct extraction procedure based on the linear two-port noise theory. This research also focuses on investigating the applicability of modern CMOS technologies for extreme environment electronics. A thorough analysis of the DC, small-signal AC, and broadband noise performance of 0.18 um and 130 nm Si-CMOS devices operating at cryogenic temperatures is presented. The room temperature RF noise model is extended to model the high-frequency noise performance of scaled MOSFETs at temperatures down to 77 K and 10 K. Significant performance enhancement at cryogenic temperatures is demonstrated, indicating the suitability of scaled CMOS technologies for low temperature electronics. The hot-carrier reliability of MOSFETs at cryogenic temperatures is investigated and the worst-case gate voltage stress condition is determined. The degradation due to hot-carrier-induced interface-state creation is identified as the dominant degradation mechanism at room temperature down to 77 K. The effect of high-energy proton radiation on the DC, AC, and RF noise performance of 130 nm CMOS devices is studied. The performance degradation is investigated up to an equivalent total dose of 1 Mrad, which represents the worst case condition for many earth-orbiting and planetary missions. The geometric scaling of MOSFETs has been augmented by the introduction of novel FET designs, such as the Si/SiGe MODFETs. A comprehensive characterization and modeling of the small-signal and high-frequency noise performance of highly scaled Si/SiGe n-MODFETs is presented. The effect of gate shot noise is incorporated in the broadband noise model. SiGe MODFETs offer the potential for high-speed and low-voltage operation at high frequencies and hence are attractive devices for future RF and mixed-signal applications. This work advances the state-of-the-art in the understanding and analysis of the RF performance of highly scaled Si-CMOS devices as well as emerging technologies, such as Si/SiGe MODFETs. The key contribution of this dissertation is to provide a robust framework for the systematic characterization, analysis and modeling of the small-signal and RF noise performance of scaled Si-MOSFETs and Si/SiGe MODFETs both for mainstream and extreme-environment applications. | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.identifier.uri | http://hdl.handle.net/1853/16232 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.subject | RF measurements | en_US |
| dc.subject | Extreme environment electronics | en_US |
| dc.subject | Proton radiation tolerance | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Scaled CMOS | en_US |
| dc.subject | Modeling | en_US |
| dc.subject | Sub-circuit model | en_US |
| dc.subject | Hot-carrier degradation | en_US |
| dc.subject | Cryogenic performance | en_US |
| dc.subject | SiGe MODFET | en_US |
| dc.subject | Short-channel FETs | en_US |
| dc.subject | RF noise | en_US |
| dc.subject.lcsh | Metal oxide semiconductors, Complementary | en_US |
| dc.subject.lcsh | Radio frequency | en_US |
| dc.subject.lcsh | Extreme environments | en_US |
| dc.subject.lcsh | Field-effect transistors | en_US |
| dc.subject.lcsh | Integrated circuits Design and construction | en_US |
| dc.title | Systematic Analysis of the Small-Signal and Broadband Noise Performance of Highly Scaled Silicon-Based Field-Effect Transistors | en_US |
| dc.type | Text | |
| dc.type.genre | Dissertation | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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