Title:
Dopants For Semiconducting Materials

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dc.contributor.patentcreator Rees Jr., William S.
dc.contributor.patentcreator Luten III, Henry A.
dc.date.accessioned 2017-05-12T14:27:39Z
dc.date.available 2017-05-12T14:27:39Z
dc.date.filed 2/2/2000
dc.date.issued 7/24/2001
dc.description.abstract A magnesium amide for use as a magnesium donor not having any Mg--C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.
dc.description.assignee Georgia Tech Research Corp.
dc.identifier.cpc C07F7/10
dc.identifier.patentapplicationnumber 09/496792
dc.identifier.patentnumber 6265597
dc.identifier.uri http://hdl.handle.net/1853/57390
dc.identifier.uspc 556/410
dc.title Dopants For Semiconducting Materials
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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