Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy

Title:

Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy

dc.contributor.advisor	May, Gary S.
dc.contributor.author	Triplett, Gregory Edward, Jr.
dc.contributor.department	Electrical and Computer Engineering
dc.date.accessioned	2006-04-25T13:33:00Z
dc.date.available	2006-04-25T13:33:00Z
dc.date.issued	2004-01
dc.description.degree	Ph.D.
dc.format.extent	2547398 bytes
dc.format.mimetype	application/pdf
dc.identifier.uri	http://hdl.handle.net/1853/9458
dc.language.iso	en_US	en
dc.publisher	Georgia Institute of Technology	en
dc.subject	Molecular beam epitaxy	en
dc.subject	Electron mobility	en
dc.subject	Epitaxy	en
dc.subject	Semiconductors Materials	en
dc.subject.lcsh	Semiconductors Materials	en_US
dc.subject.lcsh	Molecular beam epitaxy	en_US
dc.subject.lcsh	Epitaxy	en_US
dc.subject.lcsh	Electron mobility	en_US
dc.title	Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy	en
dc.type	Text
dc.type.genre	Dissertation
dspace.entity.type	Publication
local.contributor.corporatename	School of Electrical and Computer Engineering
local.contributor.corporatename	College of Engineering
relation.isOrgUnitOfPublication	5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication	7c022d60-21d5-497c-b552-95e489a06569