Title:
Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy
Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy
Author(s)
Triplett, Gregory Edward, Jr.
Advisor(s)
May, Gary S.
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Date Issued
2004-01
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2547398 bytes
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Resource Subtype
Dissertation