Title:
Fabrication Of A Semiconductor Device With Air Gaps For Ultra-low Capacitance Interconnections

dc.contributor.patentcreator Kohl, Paul A.
dc.contributor.patentcreator Zhao, Qiang
dc.contributor.patentcreator Bidstrup Allen, Sue Ann
dc.date.accessioned 2017-05-12T14:27:36Z
dc.date.available 2017-05-12T14:27:36Z
dc.date.filed 1/21/1998
dc.date.issued 12/26/2000
dc.description.abstract A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L21/7682
dc.identifier.cpc H01L23/5222
dc.identifier.cpc H01L2924/12044
dc.identifier.patentapplicationnumber 09/009952
dc.identifier.patentnumber 6165890
dc.identifier.uri http://hdl.handle.net/1853/57368
dc.identifier.uspc 438/619
dc.title Fabrication Of A Semiconductor Device With Air Gaps For Ultra-low Capacitance Interconnections
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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