Title:
Semiconductor Devices Formed Of III-Nitride Compounds, Lithium-Niobate-Tantalate, And Silicon Carbide

dc.contributor.patentcreator Doolittle, William Alan
dc.date.accessioned 2017-05-12T14:28:18Z
dc.date.available 2017-05-12T14:28:18Z
dc.date.filed 2/14/2003
dc.date.issued 2/6/2007
dc.description.abstract Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L29/1608
dc.identifier.cpc H01L29/267
dc.identifier.cpc H01L31/0304
dc.identifier.patentapplicationnumber 10/367275
dc.identifier.patentnumber 7173286
dc.identifier.uri http://hdl.handle.net/1853/57668
dc.identifier.uspc 257/78
dc.title Semiconductor Devices Formed Of III-Nitride Compounds, Lithium-Niobate-Tantalate, And Silicon Carbide
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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