Title:
Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon
Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon
| dc.contributor.advisor | Rohatgi, Ajeet | |
| dc.contributor.author | Doolittle, William Alan | en_US |
| dc.contributor.department | Electric engineering | en_US |
| dc.date.accessioned | 2007-07-20T13:14:22Z | |
| dc.date.available | 2007-07-20T13:14:22Z | |
| dc.date.issued | 1996-05 | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.identifier.bibid | 423412 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1853/15710 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.rights | Access restricted to authorized Georgia Tech users only. | en_US |
| dc.subject.lcsh | Silicon defects | en_US |
| dc.subject.lcsh | Semiconductors Defects | en_US |
| dc.title | Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon | en_US |
| dc.type | Text | |
| dc.type.genre | Dissertation | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Rohatgi, Ajeet | |
| local.contributor.author | Doolittle, William Alan | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | b7cc3b55-ebc6-42fd-b859-107fb271b10d | |
| relation.isAuthorOfPublication | a8907c5a-5af0-429f-895f-30c9de6f8c15 | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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