Title:
Configurations of misfit dislocations at interfaces of lattice-matched Ga₀.₅In₀.₅P/GaAs heterostructures
Configurations of misfit dislocations at interfaces of lattice-matched Ga₀.₅In₀.₅P/GaAs heterostructures
Author(s)
Wang, Y. Q.
Wang, Z. L. (Zhong Lin)
Brown, Terence D.
Brown, A.
May, Gary S.
Wang, Z. L. (Zhong Lin)
Brown, Terence D.
Brown, A.
May, Gary S.
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Abstract
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ~3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga₀.₅In₀.₅P epilayer.
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2000-07-10
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Article