Configurations of misfit dislocations at interfaces of lattice-matched Ga₀.₅In₀.₅P/GaAs heterostructures
Author(s)
Wang, Y. Q.
Wang, Z. L. (Zhong Lin)
Brown, Terence D.
Brown, A.
May, Gary S.
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Abstract
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ~3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga₀.₅In₀.₅P epilayer.
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2000-07-10
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