Title:
Semiconducting Oxide Nanostructures
Semiconducting Oxide Nanostructures
| dc.contributor.patentcreator | Wang, Zhong L. | |
| dc.contributor.patentcreator | Pan, Zhengwei | |
| dc.contributor.patentcreator | Dai, Zurong | |
| dc.date.accessioned | 2017-05-12T14:28:06Z | |
| dc.date.available | 2017-05-12T14:28:06Z | |
| dc.date.filed | 8/2/2002 | |
| dc.date.issued | 7/19/2005 | |
| dc.description.abstract | Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures. | |
| dc.description.assignee | Georgia Tech Research Corp | |
| dc.identifier.cpc | B82Y30/00 | |
| dc.identifier.cpc | C01G11/00 | |
| dc.identifier.cpc | C01G15/00 | |
| dc.identifier.patentapplicationnumber | 10/211696 | |
| dc.identifier.patentnumber | 6918959 | |
| dc.identifier.uri | http://hdl.handle.net/1853/57585 | |
| dc.identifier.uspc | 117/68 | |
| dc.title | Semiconducting Oxide Nanostructures | |
| dc.type | Text | |
| dc.type.genre | Patent | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | Georgia Institute of Technology | |
| local.relation.ispartofseries | Georgia Tech Patents | |
| relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
| relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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