Development of a Bottom-Up Contacting Method for Use in Nanoelectronic Devices
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Deshmukh, Nishant
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Abstract
Bottom-up methods enable 3D bulk synthesis and enhance production scalability, yet nanoelectronic devices like diodes and transistors are still contacted using top-down techniques like photolithography, which restrict processing to planar surfaces. This thesis introduces a dopant-selective atomic layer deposition (ds-ALD) process for the bottom-up fabrication of Pt contacts on Si. The ds-ALD method involves the blanket attachment of a blocking mask, followed by its selective removal with an etchant that targets specific doping concentrations to pattern metal thin films. To develop this method, we first study the attachment and selective removal of a blocking layer on Si and Ge surfaces, demonstrating selective removal using an aqueous etchant. We then explore the ds-ALD method using undecylenic acid and KOH for selective Pt deposition on heavily doped Si, observing blanket attachment of undecylenic acid regardless of doping type or concentration, and then selective removal on heavily doped Si using KOH. Finally, we characterize Pt contacts formed using ds-ALD. These contacts exhibit ohmic behavior, current flow through bulk Si and an improvement in the contact resistivity.
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Date
2024-08-26
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Dissertation (PhD)