Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors
Author(s)
Shankar, Subramaniam
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Abstract
This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform and its important performance metrics. The second chapter discusses ultra-wide tuneability and the critical role that this functionality can have on real world applications. The third chapter presents simulated and measured results of two wideband ring oscillators (8-18 GHz) designed and fabricated in the Jazz 120 BiCMOS platform. A 7-22 GHz wideband VGA in the 8HP platform is also presented further exemplifying the wideband
capabilities of SiGe HBTs.
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Date
2010-05-20
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Thesis