Title:
Elionix ELS-G100 100 kV Electron Beam Lithography System – Enabling Nanotechnology

dc.contributor.author Brown, Devin K.
dc.contributor.corporatename Georgia Institute of Technology. Institute for Electronics and Nanotechnology en_US
dc.contributor.corporatename Southeastern Nanotechnology Infrastructure Corridor en_US
dc.date.accessioned 2020-05-15T19:45:08Z
dc.date.available 2020-05-15T19:45:08Z
dc.date.issued 2020-05-07
dc.description Presented on May 7, 2020 from 11:00 a.m.-12:00 p.m. SENIC Technical Webinar Series: Session 3. en_US
dc.description The Southeastern Nanotechnology Infrastructure Corridor (SENIC) housed at the Institute for Electronics and Nanotechnology at Georgia Tech hosted a series of online technical seminars, open to the academic and industrial community with an interest in cleanroom fabrication and processing for materials, biological, and electronics research. en_US
dc.description Devin is currently a Senior Research Engineer in the Institute for Electronics and Nanotechnology. He has held that position since 2002. His research interests have included fabrication of nanoscale devices and nanoscale process development. He is currently pursuing a PhD in electrical and computer engineering and his thesis is on nano-newton force transduction. Prior to Georgia Tech, he was a Senior Yield Engineer at Intel Process Technology Development group in Hillsboro, Oregon from 1995 to 2002. His positions there included managing an Ion Implant process module initially and then later front end transistor performance process development. He graduated from Georgia Tech in 1995 with an MSEE and in 1993 with a BEE. en_US
dc.description Runtime: 62:44 minutes en_US
dc.description.abstract The Elionix ELS-G100 is a direct write electron beam lithography system that uses a 100 kV acceleration voltage and a 1.8 nm spot Gaussian beam to achieve nanometer scale resolution. The Elionix electron beam lithography tools are known for ultra-high precision to fabricate small nano-structures with excellent reliability. The ELS G-100 is capable of generating patterns with a line width of 5 nm. A 20bit DAC provides high beam positioning resolution. In addition, the laser interferometer with its reading resolution of 0.31 nm enables a stitching accuracy of 15 nm and overlay accuracy of 20 nm. The tool features a maximum field size of 1 mm and a scanning frequency of 100 MHz. Sample sizes can be handled from small millimeter size pieces up to full 8” diameter wafers. This 30-minute webinar will provide an overview of the ELS-G100 system with a discussion of key features and capabilities followed by time for Q & A. en_US
dc.format.extent 62:44 minutes
dc.identifier.uri http://hdl.handle.net/1853/62584
dc.language.iso en_US en_US
dc.publisher Georgia Institute of Technology en_US
dc.relation.ispartof Southeastern Nanotechnology Infrastructure Corridor (SENIC)
dc.subject Elionix ELS-G100 en_US
dc.subject Fabrication en_US
dc.subject Lithography system en_US
dc.subject Nanotechnology en_US
dc.title Elionix ELS-G100 100 kV Electron Beam Lithography System – Enabling Nanotechnology en_US
dc.type Moving Image
dc.type.genre Presentation
dspace.entity.type Publication
local.contributor.corporatename Institute for Electronics and Nanotechnology (IEN)
relation.isOrgUnitOfPublication 5d316582-08fe-42e1-82e3-9f3b79dd6dae
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