Title:
Design of millimeter-wave integrated silicon-germanium low-noise amplifiers
Design of millimeter-wave integrated silicon-germanium low-noise amplifiers
Author(s)
Snyder, Christopher
Advisor(s)
Cressler, John D
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Abstract
The goal of this research is to investigate the design of SiGe BiCMOS integrated cir-
cuits for low-noise amplifiers. In the first chapter of this thesis, the problem of low-noise
amplifier design at millimeter-wave frequencies will be defined and illustrated. The appli-
cation space will be described with respect to the required system elements and the place
that the low-noise amplifier has in the system. This chapter will also cover the necessary
background information in remote sensing, communications, historical uses and the chal-
lenges faced by modern remote sensing and communication systems. The second chapter
contains the theory pertaining to the design and implementation of a state-of-the art novel
low-noise amplifier implemented in a SiGe BiCMOS process technology. This chapter will
include the design procedure and implementation of two proof-of-concept LNAs to demon-
strate the proposed technique. The third chapter discusses future work that is based on the
innovations made in the demonstrated LNAs including a system that utilizes the LNAs as
integrated front end components. The fourth and final chapter summarizes the findings of
this research, the future work, and concludes this thesis.
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Date Issued
2023-12-07
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Text
Resource Subtype
Thesis