Title:
High-Speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Kuo, Wei-Min en_US
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.committeeMember Laskar, Joy
dc.contributor.committeeMember Kevin T. Kornegay
dc.contributor.committeeMember Thomas D. Morley
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2007-03-27T18:24:42Z
dc.date.available 2007-03-27T18:24:42Z
dc.date.issued 2006-10-30 en_US
dc.description.abstract This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) circuits for next-generation ground- and space-based millimeter-wave (MMW >= 30 GHz) communication front-ends and X-band (8 to 12 GHz) radar (radio detection and ranging) modules. The requirements of next-generation transceivers, for both radar and communication applications, are low power, small size, light weight, low cost, high performance, and high reliability. For this purpose, the high-speed circuits that satisfy the demanding specifications of next-generation transceivers are implemented in SiGe HBT BiCMOS technology, and the device-circuit interactions of SiGe HBTs to transceiver building blocks for performance optimization and radiation tolerance are investigated. For X-band radar module components, the dissertation covers: (1) The design of an ultra-low-noise X-band SiGe HBT low-noise-amplifier (LNA). (2) The design of low-loss shunt and series/shunt X-band Si CMOS single-pole double-throw (SPDT) switches. (3) The design of a low-power X-band SiGe HBT LNA for near-space radar applications. For MMW communication front-end circuits, the dissertation covers: (4) The design of an inductorless SiGe HBT ring oscillator for MMW operation. (5) The study of emitter scaling and device biasing on MMW SiGe HBT voltage-controlled oscillator (VCO) performance. (6) The study of proton radiation on MMW SiGe HBT transceiver building blocks. en_US
dc.description.degree Ph.D. en_US
dc.format.extent 2924659 bytes
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/14117
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.subject Phase noise en_US
dc.subject Noise figure en_US
dc.subject Isolation en_US
dc.subject Intercept point en_US
dc.subject Insertion loss en_US
dc.title High-Speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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