Title:
High-Speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers
High-Speed SiGe HBT BiCMOS Circuits for Communication and Radar Transceivers
Author(s)
Kuo, Wei-Min
Advisor(s)
Cressler, John D.
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Abstract
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) circuits for next-generation ground- and space-based millimeter-wave (MMW >= 30 GHz) communication front-ends and X-band (8 to 12 GHz) radar (radio detection and ranging) modules. The requirements of next-generation transceivers, for both radar and communication applications, are low power, small size, light weight, low cost, high performance, and high reliability. For this purpose, the high-speed circuits that satisfy the demanding specifications of next-generation transceivers are implemented in SiGe HBT BiCMOS technology, and the device-circuit interactions of SiGe HBTs to transceiver building blocks for performance optimization and radiation tolerance are investigated.
For X-band radar module components, the dissertation covers:
(1) The design of an ultra-low-noise X-band SiGe HBT low-noise-amplifier (LNA).
(2) The design of low-loss shunt and series/shunt X-band Si CMOS single-pole double-throw (SPDT) switches.
(3) The design of a low-power X-band SiGe HBT LNA for near-space radar applications.
For MMW communication front-end circuits, the dissertation covers:
(4) The design of an inductorless SiGe HBT ring oscillator for MMW operation.
(5) The study of emitter scaling and device biasing on MMW SiGe HBT voltage-controlled oscillator (VCO) performance.
(6) The study of proton radiation on MMW SiGe HBT transceiver building blocks.
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Date Issued
2006-10-30
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2924659 bytes
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Text
Resource Subtype
Dissertation