Title:
Three-beam interference lithography methodology

dc.contributor.author Stay, Justin L. en_US
dc.contributor.author Burrow, Guy M. en_US
dc.contributor.author Gaylord, Thomas K. en_US
dc.contributor.corporatename Georgia Institute of Technology. Center for Organic Photonics and Electronics en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Electrical and Computer Engineering
dc.date.accessioned 2012-12-17T15:57:54Z
dc.date.available 2012-12-17T15:57:54Z
dc.date.issued 2011-02
dc.description © 2011 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3535557 en_US
dc.description DOI: 10.1063/1.3535557 en_US
dc.description.abstract Three-beam interference lithography represents a technology capable of producing two-dimensional periodic structures for applications such as micro- and nanoelectronics, photonic crystal devices, metamaterial devices, biomedical structures, and subwavelength optical elements. In the present work, a systematic methodology for implementing optimized three-beam interference lithography is presented. To demonstrate this methodology, specific design and alignment parameters, along with the range of experimentally feasible lattice constants, are quantified for both hexagonal and square periodic lattice patterns. Using this information, example photonic crystal rodlike structures and hole-like structures are fabricated by appropriately controlling the recording wavevector configuration along with the individual beam amplitudes and polarizations, and by changing between positive- or negative-type photoresists. en_US
dc.identifier.citation Stay, J. L.; Burrow, G. M. and Gaylord, T. K., "Three-beam interference lithography methodology," Review of Scientific Instruments, 82, 2, (February 2011). en_US
dc.identifier.doi 10.1063/1.3535557 en_US
dc.identifier.issn 0034-6748 (print)
dc.identifier.issn 1089-7623 (online)
dc.identifier.uri http://hdl.handle.net/1853/45573
dc.language.iso en_US en_US
dc.publisher Georgia Institute of Technology en_US
dc.publisher.original American Institute of Physics en_US
dc.subject Lattice constants en_US
dc.subject Nanolithography en_US
dc.subject Periodic structures en_US
dc.subject Photolithography en_US
dc.subject Photonic crystals en_US
dc.subject Photoresists en_US
dc.title Three-beam interference lithography methodology en_US
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.author Gaylord, Thomas K.
local.contributor.corporatename Center for Organic Photonics and Electronics
relation.isAuthorOfPublication 517427a4-7861-4be9-93e0-6f49e3fa31ea
relation.isOrgUnitOfPublication 43f8dc5f-0678-4f07-b44a-edbf587c338f
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
COPE_152.pdf
Size:
907.34 KB
Format:
Adobe Portable Document Format
Description: