TCAD modeling of mixed-mode degradation in SiGe HBTs
Author(s)
Raghunathan, Uppili Srinivasan
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Abstract
The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as it is stressed across bias, time and temperature.
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2014-12-08
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