Expanding the Semiconductor Nanowire Design Space

Filler, Michael A.

Title:

Expanding the Semiconductor Nanowire Design Space

dc.contributor.author	Filler, Michael A.
dc.contributor.corporatename	Georgia Institute of Technology. Nanotechnology Research Center
dc.contributor.corporatename	Georgia Institute of Technology. School of Chemical and Biomolecular Engineering
dc.date.accessioned	2012-09-18T17:01:56Z
dc.date.available	2012-09-18T17:01:56Z
dc.date.issued	2012-08-28
dc.description	Michael Filler presented a lecture at the Nano@Tech Meeting on August 28, 2012 at 12 noon in room 1116 of the Marcus Nanotechnology Building.	en_US
dc.description	Dr. Michael A. Filler is an Assistant Professor in the School of Chemical & Biomolecular Engineering at the Georgia Institute of Technology. He received his doctorate in Chemical Engineering at Stanford University and was a postdoctoral scholar in the Department of Applied Physics at the California Institute of Technology. Dr. Filler’s research program lies at the intersection of chemical engineering and materials science, focusing on the synthesis and characterization of next generation electronic and photonic materials. The application of in-situ spectroscopic techniques to understand relevant interface phenomena and rationally engineer nanoscale semiconductors is a major component of his work. Dr. Filler has received several honors and recognitions including the National Science Foundation CAREER Award, Dorothy M. and Earl S. Hoffman Award from the American Vacuum Society, and the Georgia Tech CETL/BP Junior Faculty Teaching Excellence Award. He was also an invited speaker at the 2011 NAE EU-US Frontiers of Engineering Conference.
dc.description	Runtime: 49:51 minutes
dc.description.abstract	Semiconductor nanowires are promising building blocks for a diverse range of next generation electronic, photonic, and energy conversion devices. The physical properties of these materials, and nanostructures in general, are intimately connected to their structure, which must be controlled with atomic-level precision. Unfortunately, the accessible design space remains limited by a reliance on chemistries that were originally developed for 2-D thin film growth. The 3-D nature of nanowires requires new strategies with which to manipulate growth processes and engineer structure. This talk will provide an overview of our recent efforts to advance semiconductor nanowire complexity and function by expanding the available synthetic “toolkit.” Our experimental approach couples the real-time in-situ spectroscopic interrogation of nanowire chemistry with post-growth structural characterization. We connect nanowire crystal structure with the specific chemical bonds present during synthesis and, in doing so, provide a robust foundation from which to rationally achieve novel structural motifs. The role of hydrogen as the root cause of well-known phenomena in Si nanowire growth will be discussed in detail. We subsequently leverage this fundamental knowledge to generate new types of superstructures with user-defined periodicity.	en_US
dc.format.extent	49:51 minutes
dc.identifier.uri	http://hdl.handle.net/1853/44680
dc.language.iso	en_US	en_US
dc.publisher	Georgia Institute of Technology	en_US
dc.relation.ispartofseries	Nano@Tech Lecture Series
dc.subject	Chemistry	en_US
dc.subject	Nanotechnology	en_US
dc.subject	Semiconductor	en_US
dc.title	Expanding the Semiconductor Nanowire Design Space	en_US
dc.type	Moving Image
dc.type.genre	Lecture
dspace.entity.type	Publication
local.contributor.author	Filler, Michael A.
local.contributor.corporatename	Institute for Electronics and Nanotechnology (IEN)
local.relation.ispartofseries	Nano@Tech Lecture Series
relation.isAuthorOfPublication	c3f8c010-3f67-461e-a8ea-bf7cd356c7b6
relation.isOrgUnitOfPublication	5d316582-08fe-42e1-82e3-9f3b79dd6dae
relation.isSeriesOfPublication	accfbba8-246e-4389-8087-f838de8956cf