Title:
Frequency Mixing Apparatus

dc.contributor.patentcreator Perumana, Bevin George
dc.contributor.patentcreator Chakraborty, Sudipto
dc.contributor.patentcreator Lee, Chang-ho
dc.contributor.patentcreator Laskar, Joy
dc.contributor.patentcreator Woo, Sang-hyun
dc.date.accessioned 2017-05-12T14:28:15Z
dc.date.available 2017-05-12T14:28:15Z
dc.date.filed 9/8/2005
dc.date.issued 9/26/2006
dc.description.abstract A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.
dc.description.assignee Samsung Electronics Co., Ltd.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H03D7/125
dc.identifier.patentapplicationnumber 11/222011
dc.identifier.patentnumber 7113008
dc.identifier.uri http://hdl.handle.net/1853/57651
dc.identifier.uspc 327/113
dc.title Frequency Mixing Apparatus
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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