System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux
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Abstract
Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.
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1/7/2020