Title:
Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology

dc.contributor.advisor Cressler, John D.
dc.contributor.author Gong, Yunyi
dc.contributor.committeeMember Ayazi, Farrokh
dc.contributor.committeeMember Chi, Taiyun
dc.contributor.committeeMember Li, Shaolan
dc.contributor.committeeMember Wang, Hua
dc.contributor.department Electrical and Computer Engineering
dc.date.accessioned 2022-01-14T16:04:59Z
dc.date.available 2022-01-14T16:04:59Z
dc.date.created 2020-12
dc.date.issued 2020-12-06
dc.date.submitted December 2020
dc.date.updated 2022-01-14T16:04:59Z
dc.description.abstract The objective of this research is to study and leverage the unique properties and advantages of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to better design radio frequency (RF) and millimeter wave (mm-wave) circuit components. With recent developments, the high yield and modest cost silicon-based semiconductor technologies have proven to be attractive and cost-effective alternatives to high-performance III-V technology platforms. Between SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology and advanced RF complementary metal-oxide-semiconductor (CMOS) technology, the fundamental device-level differences between SiGe HBTs and field-effect transistors (FETs) grant SiGe HBTs clear advantages as well as unique design concerns. The work presented in this dissertation identifies several advantages and challenges on design using SiGe HBTs and provides design examples that exploit and address these unique benefits and problems with circuit component designs using SiGe HBTs.
dc.description.degree Ph.D.
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/66007
dc.language.iso en_US
dc.publisher Georgia Institute of Technology
dc.subject Millimeter wave
dc.subject Radio frequency
dc.subject SiGe BiCMOS
dc.title Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
thesis.degree.level Doctoral
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