Title:
Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology
Radio Frequency and Millimeter Wave Circuit Component Design with SiGe BiCMOS Technology
Author(s)
Gong, Yunyi
Advisor(s)
Cressler, John D.
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Abstract
The objective of this research is to study and leverage the unique properties and advantages of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to better design radio frequency (RF) and millimeter wave (mm-wave) circuit components. With recent developments, the high yield and modest cost silicon-based semiconductor technologies have proven to be attractive and cost-effective alternatives to high-performance III-V technology platforms. Between SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology and advanced RF complementary metal-oxide-semiconductor (CMOS) technology, the fundamental device-level differences between SiGe HBTs and field-effect transistors (FETs) grant SiGe HBTs clear advantages as well as unique design concerns. The work presented in this dissertation identifies several advantages and challenges on design using SiGe HBTs and provides design examples that exploit and address these unique benefits and problems with circuit component designs using SiGe HBTs.
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Date Issued
2020-12-06
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Resource Type
Text
Resource Subtype
Dissertation