Title:
Development of low-cost high-efficiency tunnel oxide passivated contact silicon solar cells
Development of low-cost high-efficiency tunnel oxide passivated contact silicon solar cells
dc.contributor.advisor | Rohatgi, Ajeet | |
dc.contributor.author | Huang, Ying-Yuan | |
dc.contributor.committeeMember | Kippelen, Bernard | |
dc.contributor.committeeMember | Klein, Benjamin | |
dc.contributor.committeeMember | Gaylord, Thomas | |
dc.contributor.committeeMember | Correa-Baena, Juan-Pablo | |
dc.contributor.department | Electrical and Computer Engineering | |
dc.date.accessioned | 2022-01-14T16:08:33Z | |
dc.date.available | 2022-01-14T16:08:33Z | |
dc.date.created | 2021-12 | |
dc.date.issued | 2021-12-08 | |
dc.date.submitted | December 2021 | |
dc.date.updated | 2022-01-14T16:08:34Z | |
dc.description.abstract | The objective of this research is to achieve low-cost high-efficiency (> 23%) commercial-ready bifacial screen-printed n-type Si solar cells through a combination of fundamental understanding, device modeling, technology innovations, and complete cell fabrication. This research involves developing a technology roadmap by device modeling and simulations to achieve > 23% efficiency target followed by development and implementation of required design features such as optimized boron emitter on front and tunnel oxide passivated contact (TOPCon) on the rear side of an n-type silicon wafer, in combination with advanced fine-line screen-printing metallization with floating busbars to attain the efficiency target. In addition, a next-generation industry-compatible double-side passivated contacts solar cell structure is studied and modeled. This cell structure is composed of full area p-TOPCon on the rear and selective area n-TOPCon on the front side of an n-type Si wafer. Detailed modeling using practically achievable material and device parameters shows that ~25.4% efficiency is achievable with this design using traditional screen-printing. | |
dc.description.degree | Ph.D. | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/1853/66092 | |
dc.language.iso | en_US | |
dc.publisher | Georgia Institute of Technology | |
dc.subject | Solar cells | |
dc.subject | Photovoltaics | |
dc.subject | Tunnel oxide passivated contact | |
dc.subject | TOPCon | |
dc.subject | ||
dc.title | Development of low-cost high-efficiency tunnel oxide passivated contact silicon solar cells | |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.advisor | Rohatgi, Ajeet | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isAdvisorOfPublication | b7cc3b55-ebc6-42fd-b859-107fb271b10d | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
thesis.degree.level | Doctoral |