Title:
Method For Providing A Low Temperature Curable Gallium Alloy For Multichip Module Substrates
Method For Providing A Low Temperature Curable Gallium Alloy For Multichip Module Substrates
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Abstract
A system and method for providing via-hole filling for microelectronic interconnections, is disclosed. Gallium metal is melted and mixed with a measured amount of copper and nickel, thereby creating a gallium alloy. Via holes are drilled within a substrate and filled with the gallium alloy. Excess gallium alloy is removed from the substrate. The substrate, having the filled via-holes therein, is then cured within the temperature range of room temperature to approximately 200 degrees Celsius. The gallium alloy may also be used for printing interconnect lines on a board surface.
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4/29/2003
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Patent