In-situ Cryogenic Single-Event Effects Testing of High-Speed SiGe BiCMOS Devices

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Author(s)
Walker, D. Greg
Black, Jeffrey D.
Pellish, Jonathan A.
Alles, Michael L.
Reed, Robert A.
Ramachandran, Vishwanath
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Daniel Guggenheim School of Aerospace Engineering
The Daniel Guggenheim School of Aeronautics was established in 1931, with a name change in 1962 to the School of Aerospace Engineering
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http://hdl.handle.net/1853/26390
Abstract
We present details of a first-of-a-kind system that has been custom-designed to enable in-situ single-event (SE) testing at cryogenic temperatures. The system is capable of using either liquid nitrogen (LN2, 77K) or liquid helium (LHe, 4K) as cryogens, and also includes a heating plate for fine adjustment of temperatures. This enables emulation of combined temperature and radiation environments such as those on the surfaces of the Earth's moon and those of other planets like Jupiter (Europa) and Saturn (Enceladus), where surface temperatures fluctuate from 50K at night to 400K during daytime. As part of the NASA Exploration Technology Development Program (ETDP), this project aims to aid future NASA missions to the above planets and/or moons by providing both qualitative and quantitative insights into the SE response of high-speed SiGe BiCMOS devices at cryogenic temperatures. This work also establishes excellent synergy with other NASA efforts such as the Radiation Hardened Electronics for Space Environments (RHESE) and NASA Electronic Parts and Packaging (NEPP) programs.
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NASA
Date
2008-06-25
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