Highly Efficient On-Chip Dielectric Resonator Antenna on Silicon Carbide for Extreme Environments
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Dasari, Sree Adinarayana
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Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor with high dielectric breakdown strength and exceptional resilience to high temperatures. Design, simulation, fabrication, and measurement of a highly efficient dielectric resonator antenna (DRA) on a 4H-SiC for high-temperature operation is presented in this work. The novelty of this work lies in the implementation of edge corrugations on an on-chip antenna for the first time, significantly enhancing efficiency by suppressing surface waves. Additionally, this study presents the first demonstration of a DRA on SiC, leveraging its robustness in harsh environments for reliable operation at high temperatures. The simulation results were validated through measurements of return loss and peak gain up to 400 °C, along with radiation pattern measurements up to 300 °C, marking this study as the first high temperature measurement of an on-chip antenna. In the proposed design, a sapphire rectangular dielectric resonator is coupled to an aperture on a 4H-SiC substrate, fed using a coplanar waveguide (CPW), and impedance matched by a series stub inductor. The DRA operates in the fundamental TE111 mode for broadside radiation at 28.8–30.6 GHz. The proposed design was fabricated in-house and measured using a modified probe station with a hot plate and a 6-joint robot arm. The simulated gain and peak total efficiency of 8.52 dBi and 91.5%, respectively, agree with the measured values of 8.47 dBi and 90.5%. The antenna is demonstrated to have a stable reflection coefficient and radiation pattern up to 300 °C with less than 0.5 dBi reduction in peak gain.
The contents of this thesis are published in the IEEE Antennas & Wireless Propagation Letters in September 2025.
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2025-12
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Thesis (Masters Degree)