Title:
On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform
On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform
| dc.contributor.advisor | Cressler, John D. | |
| dc.contributor.author | Wachter, Mason Thomas | |
| dc.contributor.committeeMember | Cohen, Morris | |
| dc.contributor.committeeMember | Schmidt, Britney | |
| dc.contributor.department | Electrical and Computer Engineering | |
| dc.date.accessioned | 2017-08-17T19:01:44Z | |
| dc.date.available | 2017-08-17T19:01:44Z | |
| dc.date.created | 2017-08 | |
| dc.date.issued | 2017-08-01 | |
| dc.date.submitted | August 2017 | |
| dc.date.updated | 2017-08-17T19:01:44Z | |
| dc.description.abstract | The objective of this thesis is to analyze the effects of total ionizing dose radiation on transient response of the Silicon-Germanium BiCMOS platform. Accumulation of charged particles on sensitive Si-SiO2 interfaces results from total ionizing dose (TID) and the transient response is marked by a brief change in current/voltage due to a single incident ionizing particle. The accumulation of charge at Si-SiO2 interface affects the transient response magnitude, collected charged, transient duration and full width half max of the transient response. TCAD modeling and simulations are used to confirm measured results. | |
| dc.description.degree | M.S. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/58740 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | |
| dc.subject | SiGe | |
| dc.title | On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform | |
| dc.type | Text | |
| dc.type.genre | Thesis | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Cressler, John D. | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
| thesis.degree.level | Masters |