Title:
On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform
On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform
Author(s)
Wachter, Mason Thomas
Advisor(s)
Cressler, John D.
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Abstract
The objective of this thesis is to analyze the effects of total ionizing dose radiation on transient response of the Silicon-Germanium BiCMOS platform. Accumulation of charged particles on sensitive Si-SiO2 interfaces results from total ionizing dose (TID) and the transient response is marked by a brief change in current/voltage due to a single incident ionizing particle. The accumulation of charge at Si-SiO2 interface affects the transient response magnitude, collected charged, transient duration and full width half max of the transient response. TCAD modeling and simulations are used to confirm measured results.
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Date Issued
2017-08-01
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Text
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Thesis