Title:
Solid source molecular beam epitaxy of InP-based composite-channel high electron mobility transistor structures of microwave and millimeter-wave power applications
Solid source molecular beam epitaxy of InP-based composite-channel high electron mobility transistor structures of microwave and millimeter-wave power applications
Author(s)
Kim, Tong-Ho
Advisor(s)
Brown, April S.
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Date Issued
2000-08
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Resource Type
Text
Resource Subtype
Dissertation
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Access restricted to authorized Georgia Tech users only.