Memory BIST with Statistical Failure Analysis for Diagnosis of Resistive-Open Defects due to Electromigration and Stress-Induced Voiding in an SRAM
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Kim, Woongrae
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Abstract
The object of the research has been to develop built-in self-test and statistical failure analysis methodologies for electrical detection and diagnosis of backend wearout mechanisms due to EM and SIV in an SRAM array.
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2016-01-07
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