High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique

Thumbnail Image
Files
perng_john_k_200608_mast.pdf.pdf (7.03 MB)
Author(s)
Perng, John Kangchun
Advisor(s)
Editor(s)
Associated Organization(s)
Organizational Unit
Organizational Unit
Series
Collections
Theses and Dissertations
Supplementary to:
Permanent Link
http://hdl.handle.net/1853/11543
Abstract
This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-ratio) have been demonstrated using the modified three-pulse process. Capacitive resonators, SiBAR and IBAR devices have been fabricated using the process developed in this work. IBARs (15MHz) with ultra-high Q (210,000) have been reported.
Sponsor
Date
2006-07-05
Extent
7374561 bytes
Resource Type
Text
Resource Subtype
Thesis
Rights Statement
Rights URI